Hydrogen ion sensing using schottky contacted silicon nanowire FETs

IEEE Transactions on Nanotechnology

Volumn 7, Issue 6, 2008, Pages 745-748

  Yoo, Sung Keun ^a   Yang, Sung ^a   Lee, Jong Hyun ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Biosensor; FET; Schottky contact; Silicon nanowire (SiNW)

Indexed keywords

BIOSENSORS; CORROSION RESISTANCE; FIELD EFFECT TRANSISTORS; HYDROGEN; MESFET DEVICES; NANOWIRES; NONMETALS; THRESHOLD VOLTAGE; TIME MEASUREMENT;

FET; HYDROGEN IONS; PH SOLUTIONS; PROCESS STEPS; REPRODUCIBILITY; RESPONSE TIMES; SCHOTTKY; SCHOTTKY CONTACT; SENSING ABILITIES; SILICON NANOWIRE (SINW); STABLE CURRENTS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 58149234974     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2008.2005727     Document Type: Article

References (18)

1. Y. Wang, Z. Tang, and N. A. Kotov, "Bioapplication of nanosemiconductors," Mater. Today, vol. 8, no. 5, pp. 20-31, May 2005.
2. A. Vaseashta and D. Dimova-Malinovska, "Nanostructured and nanoscale devices, sensors and detectors," Sci. Technol. Adv. Mater., vol. 6, no. 3/4, pp. 312-318, Apr./May 2005.
3. Y. Cui, Q. Wei, H. Park, and C. M. Lieber, "Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species," Science, vol. 293, no. 5533, pp. 1289-1292, Aug. 2001.
4. F. Patolsky, G. Zheng, O. Hayden, M. Lakadamyali, X. Zhuang, and C. M. Lieber, "Electrical detection of single viruses," Proc. Nat. Acad. Sci. USA, vol. 102, pp. 3208-3212, 2005.
5. Z. Li, Y. Chen, X. Li, T. I. Kamins, K. Nauka, and R. S. Willliams, "Sequence-specific label-free DNA sensors based on silicon nanowires," Nano Lett, vol. 4, no. 2, pp. 245-247, 2004.
6. Z. Gao, A. Agarwal, A. D. Trigg, N. Singh, C. Fang, C.-H. Tung, Y. Fan, K. D. Buddharaju, and J. Kong, "Silicon nanowire arrays for label-free detection of DNA," Anal. Chem., vol. 79, no. 9, pp. 3291-3297, May 2007.
7. E. Stern, J. F. Klemic, D. A. Routenberg, P. N. Wyrembak, D. B. Turner-Evans, A. D. Hamilton, D. A. LaVan, T. M. Fahmy, and M. A. Reed, "Label-free immunodetection with CMOS-compatible semiconducting nanowires," Nature, vol. 445, no. 7127, pp. 519-522, 2007.
8. J. Guo and M. S. Lundstrom, "A computational study of thin-body, doublegate, Schottky barrier MOSFETs," IEEE Trans. Electron Devices, vol. 49, no. 11, pp. 1897-1902, Nov. 2002.
9. S.-M. Koo, M. D. Edelstein, Q. Li, C. A. Richter, and E. M. Vogel, "Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors," Nanotechnology, vol. 16, no. 9, pp. 1482-1485, 2005.
10. R. J. Chen, S. Bangsaruntip, K. A. Drouvalakis, N. W S. Kam, M. Shim, Y. Li, W Kim, P. J. Utz, and H. Dai, "Noncovalent functionalization of carbon nanotubes for highly specific electronic biosensors," Proc. Nat. Acad. Sci. USA, vol. 100, no. 9, pp. 4984-4989, Apr. 2003.
11. A. Star, J.-C. P. Gabriel, K. Bradley, and G. Grulner, "Electronic detection of specific protein binding using nanotube FET devices," Nano Lett, vol. 3, no. 4, pp. 459-463, 2003.
12. H. R. Byon and H. C. Choi, "Network single-walled carbon nanotube-field effect transistors (SWNT-FETs) with increased Schottky contact area for highly sensitive biosensor applications," J. Amer. Chem. Soc., vol. 128, no. 7, pp. 2188-2189, 2006.
13. N. Elfström, A. E. Karlström, and J. Linnros, "Silcon nanoribbons for electrical detection of biomolecules," Nano Lett, vol. 8, no. 3, pp. 945-949, Mar. 2008.
14. I.-H. Hwang and J. H. Lee, "Effects of line width and dose on electron beam nano-patterning of ma-N 2403," Electron. Lett., vol. 42, no. 4, pp. 242-244, Feb. 2006.
15. L. Bousse, N. F. De Rooij, and P. Bergveld, "Operation of chemically sensitive field-effect sensors as a function of the insulator-electrolyte interface," IEEE Trans. Electron Devices, vol. ED-30, no. 10, pp. 1263-1270, Oct. 1983.
16. F. Balestra, M. Benachir, J. Brini, and G. Chibaudo, "Analytical models of subthreshold swing and threshold voltage for thin- and ultra-thin-film SOI mosfets," IEEE Trans. Electron Devices, vol. 37, no. 11, pp. 2303-2311, Nov. 1990.
17. N. G. Tarr, Y. Wang, T. Soreefan, W M. Snelgrove, B. M. Manning, S. Bazarjani, and T. W MacElwee, "Limitations on threshold adjustment by backgating in fully depleted silicon-on-insulator metal-oxidesemiconductor field effect transistors," J. Vac. Sci. Technol. A, vol. 16, no. 2, pp. 838-842, 1998.
18. G. H. Bolt, "Determination of the charge density of silica sols," J. Phys. Chem., vol. 61, no. 9, pp. 1166-1169, Sep. 1957.