Effects of line width and dose on electron beam nano-patterning of ma-N 2403

Electronics Letters

Volumn 42, Issue 4, 2006, Pages 242-244

  Hwang, I H ^a   Lee, J H ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ELECTRON BEAMS; ELECTRON SCATTERING; NANOTECHNOLOGY;

BACK SCATTERED ELECTRONS; ELECTRON BEAM NANO-LITHOGRAPHY;

PHOTORESISTS;

EID: 32944470853     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20063408     Document Type: Article

References (6)

1. Chiong, K.G., Wind, S., and Seeger, D.: ' Exposure characteristics of high-resolution negative resists ', J. Vac. Sci. Technol. B, 1990, 8, p. 1147-1453
2. Elsner, H., Meyer, H.G., Voigt, A., and Grutzner, G.: ' Evaluation of ma-N2400 series DUV photoresist for electron beam exposure ', Microelectron. Eng., 1999, 46, p. 389-392
3. Hwang, I.-H., and Lee, J.-H.: ' Nano-scale bi-stable electrostatic actuator: design and fabrication ', IEEE/LEOS Optical MEMS, 2004, p. 78-79
4. Lee, K.L., Bucchignano, J., Gelorme, J., and Viswanathan, R.: ' Ultrasonic and dip resist development processes for 50 nm device fabrication ', J. Vac. Sci. Technol. B, 2002, 61/62, p. 745-753
5. Khoury, M., and Ferry, D.K.: ' Effect of molecular weight on poly(methyl methacrylate) resolution ', J. Vac. Sci. Technol. B, 1996, 14, p. 75-79
6. Goldstein, J.I., and Yakowitz, H.: ' Scanning electron microscopy and X-ray microanalysis ', (Plenum Press, 1992, 2nd Edn)