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Volumn , Issue 3, 2009, Pages 481-489
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Growth of La1-xSrxFeO3 thin films by atomic layer deposition
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS MATERIALS;
AMORPHOUS SILICON;
ATOMIC PHYSICS;
CRYSTAL IMPURITIES;
CRYSTAL ORIENTATION;
CRYSTALLITES;
FILM PREPARATION;
GLASS;
IRON OXIDES;
LANTHANUM;
LANTHANUM ALLOYS;
LIME;
NANOCRYSTALLINE ALLOYS;
OZONE;
PHYSICAL VAPOR DEPOSITION;
SEMICONDUCTING SILICON COMPOUNDS;
SINGLE CRYSTALS;
STOICHIOMETRY;
STRONTIUM ALLOYS;
SUBSTRATES;
THIN FILMS;
ANNEALED FILMS;
ATOMIC LAYERS;
CARBONATE IMPURITIES;
MGO(100);
POLYCRYSTAL LINES;
RANDOM ORIENTATIONS;
SI (100) SUBSTRATES;
SI(100);
TEMPERATURE RANGES;
AMORPHOUS FILMS;
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EID: 58149216537
PISSN: 14779226
EISSN: 14779234
Source Type: Journal
DOI: 10.1039/b809974j Document Type: Article |
Times cited : (29)
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References (41)
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