Extended metallization reliability testing: Combining standard wafer level with product tests to increase test sensitivity

Microelectronics Reliability

Volumn 49, Issue 1, 2009, Pages 74-78

  Born, V ^a   Beck, M ^a   Bosholm, O ^a   Dalleau, D ^a   Glenz, S ^a   Haverkamp, I ^a   Kurz, G ^a   Lange, F ^a   Vest, A ^a  

^a QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ASPECT RATIO; METALLIZING; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE;

HIGH VOLUME TESTS; METALLIZATION; METALLIZATION RELIABILITIES; PRODUCT TESTS; SEMICONDUCTOR TECHNOLOGIES; STRESS MIGRATIONS; TEST METHODOLOGIES; TEST METHODS; TEST SENSITIVITIES; TEST STRUCTURES; TEST TIMES; WAFER LEVELS;

TESTING;

EID: 58149194566     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.10.017     Document Type: Article

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