A mechanism of stress-induced metal void in narrow aluminum-based metallization with the HDP CVD oxide dielectric

Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999

Volumn , Issue , 1999, Pages 149-151

  Lee, Soo Geun ^a   Oh, Heok Sang ^a   Kim, Sun Rae ^a   Song, Seung Heon ^a   Park, Sun Hu ^a   Chung, U In ^a   Kang, Geung Won ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM ALLOYS; BINARY ALLOYS; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DIELECTRIC MATERIALS; INTEGRATED CIRCUIT INTERCONNECTS; METALS; TITANIUM ALLOYS; TITANIUM OXIDES; VAPOR DEPOSITION;

CHEMICAL VAPOR DEPOSITIONS (CVD); DEPOSITION TEMPERATURES; HIGH DENSITY PLASMAS; HIGH TEMPERATURE; INTER-METAL DIELECTRICS; METAL PATTERNING; PREVENTION METHODS; PROCESS CONDITION;

PLASMA CVD;

EID: 84888267639     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1999.787105     Document Type: Conference Paper

References (4)

1. A. Tezaki, T. Mineta, H. Egawa and T. Noguchi, IRPS, (1990) 221.
2. J.W. McPherson and C.F. Dunn, J. Vac. Sci. Techno. B, 5 (1987) 1321.
3. Y. S. Yeo and P. S. Ho, Stress Induced Phenomena in MetallizationrForth international workshop, (1998) 262
4. D.S. Gardner and P.A. Flinn, IEEE Transactions on Electron Devices 35 (1988) 2160.