AF4 as a VLSI interconnect material: Initial reports on the properties of AF4, a new low-k material, are promising

Semiconductor International

Volumn 20, Issue 14, 1997, Pages 73-76

  Gaynor, Justin ^a   Ralston, Andrew ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

CVD; Interconnects; Low k dielectrics

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC CONNECTORS;

INTERCONNECTS;

VLSI CIRCUITS;

EID: 0031342871     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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