메뉴 건너뛰기




Volumn 449, Issue 1-2, 2004, Pages 6-11

Investigation on diffusion barrier properties of reactive sputter deposited TiAlxNyOz thin films for Cu metallization

Author keywords

Cu metallization; Diffusion barrier; Reactive sputtering; TiAlNO thin films

Indexed keywords

ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRON BEAMS; EVAPORATION; FILM GROWTH; HIGH TEMPERATURE EFFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPUTTER DEPOSITION; SUBSTRATES; THERMODYNAMIC STABILITY; TITANIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

EID: 1242265529     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)01384-1     Document Type: Article
Times cited : (23)

References (22)
  • 15
    • 1242298623 scopus 로고    scopus 로고
    • vol. 6.01. R.A. Storer. Philadelphia: ASTM
    • Storer R.A. Annual Book of ASTM Standard, vol. 6.01. 1998;356 ASTM, Philadelphia.
    • (1998) Annual Book of ASTM Standard , pp. 356
  • 22


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.