Enhancement of adhesion strength of Cu layer with low dielectric constant SiC:H liners in Cu interconnects

Microelectronics Journal

Volumn 36, Issue 8, 2005, Pages 749-753

  Wang, Grace ^a,b   Balakumar, S ^a   Hwee, S C ^a   Kumar, Rakesh ^a   Hara, T ^c  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c HOSEI UNIVERSITY   (Japan)

Author keywords

Adhesion strength; Cu diffusion liner; Cu layer; Trimethylsilane

Indexed keywords

ADHESION STRENGTH; CU DIFFUSION LINER; CU LAYERS; TRIMETHYLSILANE;

ADHESION; ANNEALING; ELECTRIC FIELDS; ELECTROPLATING; MICROSTRUCTURE; ORGANIC COMPOUNDS; PERMITTIVITY; PHYSICAL VAPOR DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SILICON NITRIDE; ULSI CIRCUITS;

COPPER;

EID: 23744459834     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2004.11.010     Document Type: Article

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