SCOPUS 정보 검색 플랫폼

Materials Science in Semiconductor Processing

Volumn 11, Issue 1, 2008, Pages 16-19

Inductively coupled plasma reactive ion etching of sapphire using C2F6- and NF3-based gas mixtures

(4) Kang, Dong Jin a Kim, Il Soo a Moon, Jong Ha a Lee, Byung Teak a

a Chonnam National University (South Korea)

Author keywords

Al2O3; C2F6; Dry etching; ICP RIE; NF3; Sapphire

Indexed keywords

CORUNDUM; DRY ETCHING; ETCHING; FLUORINE; GAS MIXTURES; INDUCTIVELY COUPLED PLASMA; ORGANIC POLYMERS; PHOTORESISTS; PLASMA ETCHING; PLASMAS; SAPPHIRE;

AL2O3; BIAS POWERS; C2F6; COUPLED PLASMAS; ETCH RATES; ICP POWERS; ICP-RIE; NF3; OPTIMUM CONDITIONS; PLASMA CHEMISTRIES; PROMISING TECHNIQUES; SAPPHIRE WAFERS; SMOOTH SURFACES;

REACTIVE ION ETCHING;

EID: 58149167023 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/j.mssp.2008.05.002 Document Type: Article

Times cited : (9)

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