Modeling vertical channel junction field effect devices in silicon carbide

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 4, Issue , 2004, Pages 3009-3014

  Kashyap, Avinash S ^a   Ramavarapu, Prasanna L ^a   Maganlal, Sharmila ^a   McNutt, Ty R ^a   Lostetter, Alexander B ^a   Mantooth, H Alan ^a  

^a UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN'S CONSTANT; POWER FACTOR COEFFICIENT; THERMAL VOLTAGE;

ELECTRIC POTENTIAL; MATHEMATICAL MODELS; METALLIZING; MOSFET DEVICES; PERMITTIVITY; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

FIELD EFFECT SEMICONDUCTOR DEVICES;

EID: 8744305977     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2004.1355314     Document Type: Conference Paper

References (10)

1. A. Hefner, R. Singh, J. Lai, D. Berning, S. Bouche, C. Chapuy, "SiC power diodes provide breakthrough performance for a wide range of applications," IEEE Trans. on Power Electronics, vol. 16, no. 2, pp. 273-280, March 2001.
2. T. McNutt, A. Hefner, A. Mantooth, J. Duliere, D. Berning, R. Singh, "Silicon-Carbide PiN and Merged PIN- Schottky Power Diode Models Implemented in the Saber Circuit Simulator," Trans. on Power Electronics, vol. 19, no. 3, May 2004.
3. T. McNutt, A. Hefher, A. Mantooth, J. Duliere, D. Beming, R. Singh, "Parameter Extraction Sequence for SiC Schottky, Merged PiN Schottky, and PiN Power Diode Models," Conf. Rec. of IEEE Power Electronics Specialists Conf (PESC), pp. 1269-1276, Cairns, Australia, June 2002.
4. T. McNutt, A. Hefner, A. Mantooth, D. Berning, S.H. Ryu, "Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence," Conf. Rec. of IEEE Power Electronics Specialists Conf. (PESC), PP. 217-226, Acapulco, Mexico, June 2003.
5. Kevin M. Speer, Ty R. McNutt, Alexander B. Lostetter, H. Alan Mantooth, Kraig J. Olejniczak, "A Novel High Frequency Silicon Carbide Static Induction Transistor Based Test-Bed for the Acquisition of SiC Power Device Reverse Recovery Characteristics", European Conf. on Power Electronics and Applications (EPE), Toulouse, France, Sept. 2003.
6. MAST™ and Saber are registered trademarks of Synopsys Inc., Hillsboro, Oregon.
7. B. J. Baliga, Modem Power Devices, New York, NY. John Wiley & Sons., 1987, ch. 4.
8. R. R. Siergiej, R. C. Clarke, A. K. Agarwal, C. D. Brandt, A. A. Burk, Jr., A. Morse, and P. A. Orphanos, "High Power 4H-SiC Static Induction Transistors", International Electron Devices Meeting, 1995. 10-13, pp. 353 - 356, Dec. 1995.
9. I. Angelov, N. Rorsman, J. Stenarson, M. Garcia, H. Zirath, "An empirical table-based FET model", IEEE Trans. Microwave Theory and Techniques, vol. 47, issue 12, pp. 2350 - 2357, Dec. 1999.
10. Private communication with SemiSouth Laboratories, Inc., Starkville, MS, USA, March 2004.