Simulating power semiconductor devices using variable model levels

Summer Computer Simulation Conference 2007, SCSC'07, Part of the 2007 Summer Simulation Multiconference, SummerSim'07

Volumn 1, Issue , 2007, Pages 284-292

  Santi, E ^a   Lu, L ^a   Chen, Z ^a   Hudgins, J L ^b   Mantooth, H A ^c  

^a The Department of Mechanical Engineering   (United States)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^c University of Arkansas   (United States)

Author keywords

Model levels; Power electronics; Power semiconductors

Indexed keywords

AVERAGED MODELS; BEHAVIORAL MODEL; COMPUTATIONALLY EFFICIENT; CONDUCTION LOSS; MODEL COMPLEXITY; PHYSICS-BASED; PIN DIODE; POWER SEMICONDUCTOR DEVICES; POWER SEMICONDUCTORS; SIMULATION TIME; SWITCHING WAVEFORMS; VARIABLE MODEL;

DIODES; POWER ELECTRONICS; SWITCHING;

COMPUTER SIMULATION;

EID: 77956941652     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. J.L. Hudgins, A Caiafa, and P.R. Palmer, "Multi-level device models developed for the virtual test bed (VTB),", IAS Annual Mtg. Rec., Seattle, WA, pp. 2528-2535, Oct. 2004.
2. I. Budihardjo, P.O. Lauritzen, K.Y. Wong, R.B. Darling, and H.A. Mantooth, "Defining standard performance levels for power semiconductor devices," IEEE IAS Ann. Mtg. Rec., pp. 1084-1090, Seattle, October 1995.
3. "Variable Model Levels for Power Semiconductor Devices," SCS 2007.
4. P.R. Palmer, E. Santi, J.L. Hudgins, X. Kang, J.C. Joyce, and P. Y. Eng, "Circuit Simulator Models for the Diode and IGBT With Full Temperature Dependent Features," IEEE Trans. Pwr. Elec., vol.18, No. 5, pp. 1220-1229, Sept. 2003.
5. X. Kang, A. Caiafa, E. Santi, J.L. Hudgins, P.R. Palmer, "Characterization and Modeling of High-Voltage Field-Stop IGBTs," IEEE Transactions on Industry Applications, Vol. 39, No. 4, pp. 922-928, July 2003
6. Katsunori Asano, Tsuyoshi Funaki, Yoshitaka Sugawara, Takashi Hikihara, " Simple circuit model of SiC pin diode composed by using experimental electrical characteristics," IEICE Electronics Express, Vol.2, No.13, pp. 392-398, july 2005.
7. Anis Ammous, Kaiçar Ammous, Moez Ayedi, Youssef Ounajjar, Fayçal Sellami, "An Advanced PWM-Switch Model Including Semiconductor Device Nonlinearities," IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 18, NO. 5, pp.1230-1237, SEPT 2003