Variable model levels for power semiconductor devices

Summer Computer Simulation Conference 2007, SCSC'07, Part of the 2007 Summer Simulation Multiconference, SummerSim'07

Volumn 1, Issue , 2007, Pages 276-283

  Santi, E ^a   Hudgins, J L ^b   Mantooth, H A ^c  

^a The Department of Mechanical Engineering   (United States)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^c University of Arkansas   (United States)

Author keywords

Levels; Power electronics; Power semiconductors

Indexed keywords

BEHAVIORAL MODEL; CIRCUIT SIMULATORS; DEVICE MODELS; FINITE DIFFERENCE; FINITE ELEMENT; INTEGRATED GATE-COMMUTATED THYRISTORS; LEVELS; PHYSICS-BASED MODELS; POWER SEMICONDUCTOR DEVICES; POWER SEMICONDUCTORS; VARIABLE MODEL;

CIRCUIT SIMULATION; COMPUTER SIMULATION; POWER ELECTRONICS; SEMICONDUCTOR DEVICES;

FINITE ELEMENT METHOD;

EID: 77956893336     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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