Compact circuit simulation model of silicon carbide static induction and junction field effect transistors

Proceedings of the IEEE Workshop on Computers in Power Electronics, COMPEL

Volumn , Issue , 2004, Pages 29-35

  Kashyap, Avinash S ^a   Ramavarapu, Prasanna L ^a   Lal, Sharmila Magan ^a   Mcnutt, Ty R ^a   Lostetter, Alexander B ^a   Funaki, Tsuyoshi ^b   Mantooth, H Alan ^a  

^a UNIVERSITY OF ARKANSAS   (United States)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC INDUCTORS; ELECTRIC NETWORK ANALYSIS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; MOSFET DEVICES; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; TEMPERATURE DISTRIBUTION;

CIRCUIT SIMULATION; GATE CONTACTS; STATIC INDUCTION TRANSISTORS (SIT); TEMPERATURE RANGE;

POWER ELECTRONICS;

EID: 21644482105     PISSN: 10935142     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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