Analytic model of I-V characteristics of 4H-SiC MESFETs based on multiparameter mobility model

IEEE Transactions on Electron Devices

Volumn 51, Issue 7, 2004, Pages 1065-1068

  Lv, Hongliang ^a   Zhang, Yimen ^a   Zhang, Yuming ^a   Yang, Lin An ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

MONTE CARLO CALCULATIONS; MULTIPARAMETER MOBILITY MODEL; SEMICONDUCTING SILICON CARBIDE; VELOCITY FIELD RELATIONSHIP;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; ELECTRON SCATTERING; INTEGRAL EQUATIONS; MONTE CARLO METHODS; POISSON EQUATION; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE;

MESFET DEVICES;

EID: 4344566651     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.829859     Document Type: Article

References (10)

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