Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates

Applied Surface Science

Volumn 255, Issue 6, 2009, Pages 3664-3668

  Gao, Haiyong ^a   Yan, Fawang ^a   Zhang, Yang ^a   Li, Jinmin ^a   Zeng, Yiping ^a   Wang, Junxi ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

GaN; MOCVD; Nano patterned; Nonpolar

Indexed keywords

III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; PLASMA ETCHING; SAPPHIRE;

CRYSTAL QUALITIES; CRYSTALLINE QUALITY; INDUCTIVE COUPLED PLASMA; NANO-PATTERNED; NON-POLAR; ROCKING CURVES; SAPPHIRE SUBSTRATES; SURFACE FLATNESS;

GALLIUM NITRIDE;

EID: 57849159695     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.10.018     Document Type: Article

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