Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 2330-2333

  Ling, Shih Chun ^a   Wang, Te Chung ^a   Ko, Tsung Shine ^a   Lu, Tien Chang ^a   Kuo, Hao Chung ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Inorganic compounds; B2. Semiconducting gallium compounds; B3. Light emitting diodes

Indexed keywords

EPITAXIAL GROWTH; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ULTRAVIOLET RADIATION;

DOUBLE EMISSION PEAKS; TRENCH EPITAXIAL LATERAL OVERGROWTH (TELOG);

LIGHT EMITTING DIODES;

EID: 41449107851     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.12.013     Document Type: Article

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