Tunable surface band gap in Mgx Zn1-xO thin films

Journal of Chemical Physics

Volumn 129, Issue 23, 2008, Pages

  Xue, Mingshan ^a   Guo, Qinlin ^a   Wu, Kehui ^a   Guo, Jiandong ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRON DIFFRACTION; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SPECTROSCOPY; ELECTRONS; ENERGY DISSIPATION; ENERGY GAP; GALLIUM ALLOYS; LIGHT; MOLYBDENUM; PHASE TRANSITIONS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SURFACE ANALYSIS; SURFACES; THIN FILMS; VACUUM; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC SULFIDE;

CUBIC STRUCTURES; ENERGY ELECTRON DIFFRACTIONS; EPITAXIALLY GROWN; HIGH RESOLUTION ELECTRON ENERGY LOSSES; IN-SITU; MO(110); O THIN FILMS; QUANTUM WELLS; SURFACE ANALYSIS TECHNIQUES; SURFACE BAND GAPS; WINDOW WIDTHS; WURTZITE; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 57849158190     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3041774     Document Type: Article

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