Phase separation in Ga-doped MgZnO layers grown by plasma-assisted molecular-beam epitaxy

Materials Science in Semiconductor Processing

Volumn 6, Issue 5-6, 2003, Pages 539-541

  Harada, Chihiro ^a   Ko, Hang Ju ^a   Makino, Hisao ^a   Yao, Takafumi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Ga doping; MgZnO; P MBE; Phase separation

Indexed keywords

CRYSTALLOGRAPHY; DOPING (ADDITIVES); ENERGY GAP; GALLIUM; GRAIN BOUNDARIES; INDUCTIVELY COUPLED PLASMA; MOLECULAR BEAM EPITAXY; PHASE SEPARATION; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

BANDGAP ENERGIES; BANDGAP SEMICONDUCTORS;

MAGNESIUM COMPOUNDS;

EID: 1642602983     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2003.08.003     Document Type: Conference Paper

References (7)

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