BGaInAs solar cells lattice-matched to GaAs

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 990-993

  Geisz, J F ^a   Friedman, D J ^a   Kurtz, Sarah ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; EFFICIENCY; ENERGY GAP; GALLIUM; GALLIUM ALLOYS; GALLIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPEN CIRCUIT VOLTAGE; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTING GALLIUM;

CELL EFFICIENCY; GAAS SUBSTRATES; LATTICE-MATCHED; METAL ORGANIC; MINORITY CARRIER DIFFUSION LENGTH; MULTI-JUNCTION III-V SOLAR CELLS; SINGLE JUNCTION SOLAR CELLS; STRAIN-FREE;

SOLAR CELLS;

EID: 62649128236     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916052     Document Type: Conference Paper

References (11)

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2. D. J. Friedman, J. F. Geisz, S. R. Kurtz, and J. M. Olson, "1-eV solar cells with GalnNAs active layer," J. Cryst. Growth, 195, pp. 409-415, 1998.
3. S. R. Kurtz, A. A. Allerman, E. D. Jones, J. M. Gee, J. J. Banas, and B. E. Hammons, "InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs," Appl Phys Lett, 74, pp. 729-731, 1999.
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10. S. R. Kurtz, D. Myers, and J. M. Olson, "Projected Performance of Three- and Four-Junction Devices using GaAs and GalnP," presented at 26th IEEE PVSC, Anaheim, 1997.
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