Optical transmission and photoluminescence of Silicon Nitride thin films implanted with Si Ions

Electrochemical and Solid-State Letters

Volumn 12, Issue 2, 2009, Pages

  Cen, Z H ^a   Chen, T P ^a   Ding, L ^a   Ye, J D ^b   Liu, Y ^a   Yang, M ^a   Wong, J I ^a   Liu, Z ^a   Fung, S ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ION BOMBARDMENT; ION IMPLANTATION; LIGHT EMISSION; LIGHT TRANSMISSION; LUMINESCENCE; NITRIDES; PHOTOLUMINESCENCE; SILICON; SILICON NITRIDE; THIN FILMS;

DEFECT STATES; EXCITATION TRANSITIONS; NITRIDE THIN FILMS; OPTICAL TRANSMISSIONS; PL BANDS; PL EXCITATIONS; RADIATIVE RECOMBINATIONS; SI IMPLANTATIONS; SI NANOCLUSTERS; SILICON NITRIDE THIN FILMS; THERMAL ANNEALING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 57649242638     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3039952     Document Type: Article

References (23)

1. N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, Phys. Rev. Lett., 86, 1355 (2001).
2. G. Y. Sung, N. M. Park, J. H. Shin, K. H. Kim, T. Y. Kim, K. S. Cho, and C. Huh, IEEE J. Sel. Top. Quantum Electron., 12, 1545 (2006).
3. L. Dal Negro, J. H. Yi, J. Michel, L. C. Kimerling, T.-W. F. Chang, V. Sukhovatkin, and E. H. Sargent, Appl. Phys. Lett., 88, 233109 (2006).
4. M. Molinari, H. Rinnert, and M. Vergnat, J. Appl. Phys., 101, 123532 (2007).
5. M. Vetter and M. Rojahn, Mater. Sci. Eng., B, 71, 321 (2000).
6. L. Ding, T. P. Chen, Y. Liu, C. Y. Ng, and S. Fung, Phys. Rev. B, 72, 125419 (2005).
7. Y. Liu, T. P. Chen, L. Ding, M. Yang, J. I. Wong, C. Y. Ng, S. F. Yu, Z. X. Li, C. Yuen, F. R. Zhu, J. Appl. Phys., 101, 104306 (2007).
8. Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, M. Yang, J. I. Wong, Z. Liu, Y. C. Liu, and S. Fung, Appl. Phys. Lett., 93, 023122 (2008).
9. Y. Y. Lü, C. L. Liu, L. J. Yin, Z. Wang, and X. D. Zhang, Radiat. Meas., 43, S594 (2008).
10. J. F. Ziegler, J. P. Biersach, and U. Littmark, SRIM, Pergamon, New York (2006); available from www.srim.org
11. L. Dal Negro, R. Li, J. Warga, S. Yerci, S. N. Basu, S. Hamel, and G. Galli, Silicon Nanophotonics: Basic Principles, Present Status and Perspectives, L. Khriachtchev, Editor, Chap., World Scientific, River Edge, NJ (2008).
12. S. V. Deshpande, E. Gulari, S. W. Brown, and S. C. Rand, J. Appl. Phys., 77, 6534 (1995).
13. K. S. Seol, T. Futami, T. Watanabe, Y. Ohki, and M. Takiyama, J. Appl. Phys., 85, 6746 (1999).
14. I. E. Tyschenko, V. A. Volodin, L. Rebohle, M. Voelskov, and V. Skorupa, Semiconductors, 33, 523 (1999).
15. H. L. Hao, L. K. Wu, W. Z. Shen, and H. F. W. Dekkers, Appl. Phys. Lett., 91, 201922 (2007).
16. M. Wang, D. Li, Z. Yuan, D. Yang, and D. Que, Appl. Phys. Lett., 90, 131903 (2007).
17. V. V. Vasilev and I. P. Mikhailovskii, Phys. Status Solidi A, 90, 355 (1985).
18. H. Z. Song and X. M. Bao, Phys. Rev. B, 55, 6988 (1997).
19. J. Robertson, Philos. Mag. B, 63, 47 (1991).
20. Y. H. Xie, W. L. Wilson, F. M. Ross, J. A. Mucha, E. A. Fitzgerald, J. M. Macaulay, and T. D. Harris, J. Appl. Phys., 71, 2403 (1992).
21. M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, Phys. Rev. Lett., 82, 197 (1999).
22. Z. Y. Zhang, X. L. Wu, J. C. Shen, L. L. Xu, and P. K. Chu, Appl. Phys. Lett., 91, 193111 (2007).
23. R. Huang, K. Chen, B. Qian, S. Chen, W. Li, J. Xu, Z. Ma, and X. Huang, Appl. Phys. Lett., 89, 221120 (2006).