메뉴 건너뛰기




Volumn 91, Issue 12, 2008, Pages 4151-4153

Effect of aluminum doping on microwave permittivity of silicon carbide powders

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM; DIFFUSION; DOPING (ADDITIVES); GRAPHITE; LIGHT METALS; PARTICLE SIZE ANALYSIS; PERMITTIVITY; SILICON CARBIDE; THERMAL DIFFUSION; THERMAL DIFFUSION IN LIQUIDS; X RAY DIFFRACTION ANALYSIS;

EID: 57649227256     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2008.02793.x     Document Type: Article
Times cited : (25)

References (16)
  • 1
    • 0033686782 scopus 로고    scopus 로고
    • Flexural Strength and Toughness of Liquid Phase Sintered Silicon Carbide
    • G. Magnani, G. L. Minoccari L. Pilotti Flexural Strength and Toughness of Liquid Phase Sintered Silicon Carbide Ceram. Int., 26 [5] 495 500 (2000).
    • (2000) Ceram. Int. , vol.26 , Issue.5 , pp. 495-500
    • Magnani, G.1    Minoccari, G.L.2    Pilotti, L.3
  • 2
    • 0036134578 scopus 로고    scopus 로고
    • Formation of SiC Via Carbothermal Reduction of a Carbon-Containing Mesoporous MCM-48 Silica Phase: A New Route to Produce High Surface Area SiC
    • J. Parmentier, J. Patarin, J. Dentzer C. Vix-Guterl Formation of SiC Via Carbothermal Reduction of a Carbon-Containing Mesoporous MCM-48 Silica Phase: A New Route to Produce High Surface Area SiC Ceram. Int., 28 [1] 1 7 (2002).
    • (2002) Ceram. Int. , vol.28 , Issue.1 , pp. 1-7
    • Parmentier, J.1    Patarin, J.2    Dentzer, J.3    Vix-Guterl, C.4
  • 3
    • 13644253222 scopus 로고    scopus 로고
    • Properties of Pt/4H-SiC Schottky Diodes with Interfacial Layer at Elevated Temperatures
    • M. Sochacki, A. Kolendo, J. Szmidt A. Werbowy Properties of Pt/4H-SiC Schottky Diodes with Interfacial Layer at Elevated Temperatures Solid-State Electron., 49 [4] 585 90 (2005).
    • (2005) Solid-State Electron. , vol.49 , Issue.4 , pp. 585-90
    • Sochacki, M.1    Kolendo, A.2    Szmidt, J.3    Werbowy, A.4
  • 4
    • 0036721657 scopus 로고    scopus 로고
    • Electrical Characteristics of Metal-Oxide-Semiconductor Capacitors on Plasma Etch-Damaged Silicon Carbide
    • S.-M. Koo, S.-K. Lee, C.-M. Zetterling M. Ostling Electrical Characteristics of Metal-Oxide-Semiconductor Capacitors on Plasma Etch-Damaged Silicon Carbide Solid-State Electron., 46 [9] 1375 80 (2002).
    • (2002) Solid-State Electron. , vol.46 , Issue.9 , pp. 1375-80
    • Koo, S.-M.1    Lee, S.-K.2    Zetterling, C.-M.3    Ostling, M.4
  • 5
    • 33646260202 scopus 로고    scopus 로고
    • Effects of Heating Ramp Rates on the Characteristics of Al Implanted 4H-SiC Junctions
    • A. Poggi, M. Canino A. Carnera Effects of Heating Ramp Rates on the Characteristics of Al Implanted 4H-SiC Junctions Appl. Phys. Lett., 88, 162106 (2006).
    • (2006) Appl. Phys. Lett. , vol.88 , pp. 162106
    • Poggi, A.1    Canino, M.2    Carnera, A.3
  • 6
    • 0031103158 scopus 로고    scopus 로고
    • A Raman and Photoconductivity Analysis of Boron-Doped SiC: H Films Deposited Using the Electron Cyclotron Resonance Method
    • S. F. Yoon, R. Ji, J. Ahn W. I. Milne A Raman and Photoconductivity Analysis of Boron-Doped SiC: H Films Deposited Using the Electron Cyclotron Resonance Method J. Mater. Sci., 32 [5] 1163 7 (1997).
    • (1997) J. Mater. Sci. , vol.32 , Issue.5 , pp. 1163-7
    • Yoon, S.F.1    Ji, R.2    Ahn, J.3    Milne, W.I.4
  • 7
    • 0037197449 scopus 로고    scopus 로고
    • Electrical Properties of SiC: Characterisation of Bulk Crystals and Epilayers
    • K. Irmscher Electrical Properties of SiC: Characterisation of Bulk Crystals and Epilayers Mater. Sci. Eng. B, 91-92, 358 66 (2002).
    • (2002) Mater. Sci. Eng. B , vol.9192 , pp. 358-66
    • Irmscher, K.1
  • 8
    • 2942625889 scopus 로고    scopus 로고
    • Further Studies of N Doped a-SiC: H Films Deposited by PECVD and Annealed by Pulse Electron Beam
    • J. Huran, I. Hotovy, A. P. Kobzev N. I. Balalykin Further Studies of N Doped a-SiC: H Films Deposited by PECVD and Annealed by Pulse Electron Beam Thin Solid Films, 459, 149 51 (2004).
    • (2004) Thin Solid Films , vol.459 , pp. 149-51
    • Huran, J.1    Hotovy, I.2    Kobzev, A.P.3    Balalykin, N.I.4
  • 12
    • 0001679674 scopus 로고
    • Growth of Silicon Carbide by Chemical Vapor Deposition
    • B. J. Choi D. R. Kim Growth of Silicon Carbide by Chemical Vapor Deposition J. Mater. Sci. Lett., 10, 860 7 (1991).
    • (1991) J. Mater. Sci. Lett. , vol.10 , pp. 860-7
    • Choi, B.J.1    Kim, D.R.2
  • 13
    • 37849189742 scopus 로고    scopus 로고
    • A Two-Layer Dielectric Absorber Covering a Wide Frequency Range
    • F. Luo D.-M. Zhu A Two-Layer Dielectric Absorber Covering a Wide Frequency Range Ceram. Int., 33, 197 200 (2007).
    • (2007) Ceram. Int. , vol.33 , pp. 197-200
    • Luo, F.1    Zhu, D.-M.2
  • 15
    • 57649236751 scopus 로고    scopus 로고
    • Chapter 2 SiC Fabrication Technology: Growth and Doping
    • V. A. Dmitriev M. G. Spencer Chapter 2 SiC Fabrication Technology: Growth and Doping Semicond. Semimet., 52 1998).
    • (1998) Semicond. Semimet. , vol.52
    • Dmitriev, V.A.1    Spencer, M.G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.