Further studies of N doped a-SiC:H films deposited by PECVD and annealed by pulse electron beam

Thin Solid Films

Volumn 459, Issue 1-2, 2004, Pages 149-151

  Huran, J ^a   Hotovy I ^b   Kobzev, A P ^c   Balalykin, N I ^c  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^c JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

Author keywords

Amorphous silicon carbide thin film; Elastic recoil detection (ERD); Plasma enhanced chemical vapor deposition (PECVD); Rutherford backscattering spectrometry (RBS); Structural and electrical properties

Indexed keywords

AMORPHOUS FILMS; CHEMICAL BONDS; DOPING (ADDITIVES); HYDROGEN; NITROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE;

AMORPHOUS SILICON CARBIDE THIN FILMS; ELASTIC RECOIL DETECTION (ERD); STRUCTURAL AND ELECTRICAL PROPERTIES;

THIN FILMS;

EID: 2942625889     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.12.119     Document Type: Conference Paper

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