Electrical characteristics of metal-oxide-semiconductor capacitors on plasma etch-damaged silicon carbide

Solid-State Electronics

Volumn 46, Issue 9, 2002, Pages 1375-1380

  Koo, S M ^a   Lee, S K ^a   Zetterling, C M ^a   Ostling M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Dry etch; Inductively coupled plasma; Metal oxide semiconductor; Silicon carbide

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DRY ETCHING; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; INDUCTIVELY COUPLED PLASMA; OXIDATION; PLASMA ETCHING; SILICON CARBIDE;

INTERFACE DENSITIES;

MOS CAPACITORS;

EID: 0036721657     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00068-0     Document Type: Article

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