Uniform InGaAs quantum dot arrays fabricated using nanosphere lithography

Applied Physics Letters

Volumn 93, Issue 23, 2008, Pages

  Qian, X ^a   Li, J ^a   Wasserman, D ^a   Goodhue, W D ^a  

^a UNIVERSITY OF MASSACHUSETTS LOWELL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BROMINE; NANOSPHERES; OPTICAL WAVEGUIDES; OXYGEN; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS;

BLUE SHIFTS; DEAD LAYERS; DOT SIZES; ETCH PROCESSES; INGAAS/GAAS; LATERAL CONFINEMENTS; LOW TEMPERATURE PHOTOLUMINESCENCES; NANOSPHERE LITHOGRAPHIES; OPTICALLY ACTIVES; OXYGEN PLASMAS; QUANTUM DOTS; QUANTUM WELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 57649114074     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3040683     Document Type: Article

References (24)

1. A. Scherer and H. G. Craighead, Appl. Phys. Lett. 0003-6951 10.1063/1.97387 49, 1284 (1986).
2. J. Christen, M. Krahl, and D. Bimberg, Superlattices Microstruct. 0749-6036 10.1016/0749-6036(90)90105-G 7, 1 (1990).
3. D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbars, and P. M. Petroff, Appl. Phys. Lett. 63, 3203 (1993).
4. A. Madhukar, Q. Xie, P. Chen, and A. Konkar, Appl. Phys. Lett. 64, 2727 (1994).
5. J. Ro, S. Kim, and E. Lee, J. Cryst. Growth 0022-0248 10.1016/S0022-0248(98)00064-5 188, 377 (1998).
6. D. Bimberg, M. Grundmann, F. Heinrichsdorff, N. N. Ledentsov, V. M. Ustinov, A. E. Zhukov, A. R. Kovsh, M. V. Maximov, Y. M. Shernyakov, B. V. Volovik, A. F. Tsatsul'nikov, P. S. Kop'ev, and Z. I. Alferov, Thin Solid Films 0040-6090 10.1016/S0040-6090(00)00697-0 367, 235 (2000).
7. C. Reese, C. Becher, A. Imamoglu, E. Hu, B. D. Gerardot, and P. M. Petroff, Appl. Phys. Lett. 0003-6951 10.1063/1.1362334 78, 2279 (2001).
8. H. C. Liu, M. Gao, J. McCaffrey, Z. R. Wasilewski, and S. Fafard, Appl. Phys. Lett. 0003-6951 10.1063/1.1337649 78, 79 (2001).
9. S. Tsuboi and K. Suzuki, J. Vac. Sci. Technol. B 11, 2994 (1993).
10. H. G. Craighead, J. Appl. Phys. 0021-8979 10.1063/1.333015 55, 4430 (1984).
11. M. Qi and H. I. Smith, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1523021 20, 2991 (2002).
12. K. Arshak and M. Mihov, J. Optoelectron. Adv. Mater. 7, 193 (2005). 0935-9648
13. H. W. Deckman and J. H. Dunsmuir, Appl. Phys. Lett. 0003-6951 10.1063/1.93501 41, 377 (1982).
14. M. Imada, S. Noda, A. Chutinan, T. Tokuda, M. Murata, and G. Sasaki, Appl. Phys. Lett. 0003-6951 10.1063/1.124361 75, 316 (1999).
15. A. Bezryadin, C. Dekker, and G. Schmid, Appl. Phys. Lett. 0003-6951 10.1063/1.119871 71, 1273 (1997).
16. L. L. Chan, P. Y. Li, D. Puff, and B. T. Cunningham, Sens. Actuators B 0925-4005 10.1016/j.snb.2006.02.047 120, 392 (2007).
17. M. Duval Malinsky, K. Lance Kelly, G. C. Schatz, and R. P. Van Duyne, J. Phys. Chem. B 1089-5647 10.1021/jp002906x 105, 2343 (2001).
18. X. Qian, J. Li, and W. D. Goodhue, Mater. Res. Soc. Symp. Proc. 1059, 1059-KK11-10 (Materials Research Society, Pittsburgh, 2008).
19. W. D. Goodhue, Y. Royter, D. E. Mull, S. S. Choi, and C. G. Fonstad, J. Electron. Mater. 28, 364 (1999).
20. R. Steffen, J. Oshinowo, T. Koch, and A. Forchel, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.588311 13, 2888 (1995).
21. L. Chu, M. Arzberger, G. Bohm, and G. Abstreiter, J. Appl. Phys. 0021-8979 10.1063/1.369549 85, 2355 (1999).
22. R. Steffen, Th. Koch, J. Oshinowo, F. Faller, and A. Forchel, Appl. Phys. Lett. 0003-6951 10.1063/1.116467 68, 223 (1996).
23. B. E. Maile, A. Forchel, R. Germann, A. Menschig, H. P. Meier, and D. Gruetzmacher, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.584076 6, 2308 (1988).
24. W. E. Spicer, I. Lindau, P. Skeath, C. Y. Su, and P. Chye, Phys. Rev. Lett. 44, 420 (1980).