Bromine ion-beam-assisted etching of III-V semiconductors

Journal of Electronic Materials

Volumn 28, Issue 4, 1999, Pages 364-368

  Goodhue, W D ^a,b   Royter, Y ^c   Mull, D E ^b   Choi, S S ^a   Fonstad, C G ^c  

^a University of Massachusetts Lowell   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYS; ARGON; BROMINE; DENSITY (SPECIFIC GRAVITY); ETCHING; HETEROJUNCTIONS; ION BEAMS; SUBSTRATES; TEMPERATURE; VAPOR PRESSURE;

BROMINE ION BEAM ASSISTED ETCHING; VERTICAL SIDEWALLS;

SEMICONDUCTOR MATERIALS;

EID: 0033116670     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0234-4     Document Type: Article

References (4)

1. J.M. Rossler, Y. Royter, D.E. Mull, W.D. Goodhue and C.G. Fonstad, J. Vac. Sci. Technol. B May/June (1998).
2. Vapor pressure data, American Institute of Physics Handbook, 3rd Ed. (New York, McGraw-Hill, 1989), Section 4K.
3. Vapor pressure data, Eigenschaften Der Materie In Ihren Aggregatzustanden, (Berlin: Springer Verlag, 1960), Section 22.
4. Vapor pressure data, CRC Handbook of Chemistry and Physics, (New York: CRC Press, 1998), Section 6.