Surface stability of InGaN-channel based HFETs

Electronics Letters

Volumn 39, Issue 22, 2003, Pages 1614-1616

  Neuburger, M ^a   Daumiller, I ^a   Zimmermann, T ^a   Kunze, M ^a   Koley, G ^b   Spencer, M G ^b   Dadgar, A ^c   Krtschil, A ^c   Krost, A ^c   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

^b Department of Obstetrics Gynecology   (United States)

^c OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC CHARGE; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; MICROSCOPIC EXAMINATION; POLARIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SURFACE PROPERTIES; SWITCHING;

KELVIN PROBE MICROSCOPY; SURFACE POTENTIAL;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0242468756     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030974     Document Type: Article

References (7)

1. KOLEY, G., et al.: 'Slow transients observed in AlGaN/GaN HFETs: Effects of SiNx passivation and UV illumination", IEEE Trans. Electron Devices, 2003, 50, p. 886
2. KOLEY, G., et al: 'Modulation of surface barrier in AlGaN/GaN heterostructures', Phys. Status Solidi B, 2002, 234, (3), pp. 734-737
3. KOHN, E., et al.: Transient characteristics of GaN-based heterostructure field-effect transistors', IEEE MTT-S Int. Microw. Symp. Dig., 2003, 51, (2), pp. 634-642
4. KOHN, E., et al.: 'Switching behaviour of GaN-based HFETs: Thermal and electronic transients', Electron. Lett., 2002, 38, (12)
5. SEYBOTH, M., et al.: 'InGaN-channels for field effect transistor applications'. 44th Electronic Materials Conf., Santa Barbara, CA, USA, June 2002
6. KROST, A., and DADGAR, A.: 'GaN-based devices on Si', Phys. Status Solidi. A, 2002, 194, (2), pp. 361-375
7. IBBETSON, J.P., et al; 'Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors', Appl. Phys. Lett., 2000, 77, (2), pp. 250-252