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Volumn 1, Issue 6, 2008, Pages 0618011-0618013

Temporal changes in source-drain current for organic field-effect transistors caused by dipole on insulator surface

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; INSULATING MATERIALS; SILICON COMPOUNDS; TRANSISTORS;

EID: 57649105059     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.061801     Document Type: Article
Times cited : (5)

References (21)
  • 7
    • 0036833236 scopus 로고    scopus 로고
    • Prog. Polym. Sci
    • R. A. Pethrick and D. Hayward: Prog. Polym. Sci. 27 (2002) 1983.
    • (2002) , vol.27 , pp. 1983
    • Pethrick, R.A.1    Hayward, D.2
  • 14
    • 57649100301 scopus 로고    scopus 로고
    • The SiO2 surface mainly comprises Si-O-Si and Si-O-H bonds. The O-H bonds in the Si-O-H bonds can move slightly through the rotation of the Si-O bond. However, the available moving distance and angle in this case are very small as compared to those in the case of monolayers and polystyrene derivatives. The other component, i.e, the Si-O-Si bond, cannot move due to the lack of freely rotating single bonds. Thus, the dipoles of the SiO2 surface are almost immobile as compared to those of the monolayers and polystyrene derivatives
    • 2 surface are almost immobile as compared to those of the monolayers and polystyrene derivatives.
  • 18
    • 57649103759 scopus 로고    scopus 로고
    • SD was recovered 3 h after turning off the gate voltage.
    • SD was recovered 3 h after turning off the gate voltage.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.