Theoretical studies of defects states in GaSe and GaTe

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7079, Issue , 2008, Pages

  Rak, Zsolt ^a   Mahanti, S D ^a   Mandal, Krishna C ^b   Fernelius, N C ^c  

^a MICHIGAN STATE UNIVERSITY   (United States)

^b EIC LABORATORIES INC   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Ab initio calculations; Defects; Electronic structure; Wide gap semiconductors

Indexed keywords

AB INITIO CALCULATIONS; AB-INITIO; DEFECT STATE; DENSITY FUNCTIONAL; POINT SHIFTS; SPIN-ORBIT INTERACTIONS; SUBSTITUTIONAL IMPURITIES; SUPERCELL MODELS; THEORETICAL RESULTS; THEORETICAL STUDIES; WIDE GAP SEMICONDUCTORS;

BAND STRUCTURE; CRYSTALS; DENSITY FUNCTIONAL THEORY; ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GAMMA RAYS; IMPURITIES; NEUTRON DETECTORS; OLIGOMERS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; STARS; SUBSTITUTION REACTIONS;

DEFECT STRUCTURES;

EID: 57549108317     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.796229     Document Type: Conference Paper

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