Photoluminescence spectra of n-GaSe layered semiconductor doped with Sn

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers

Volumn 35, Issue 8, 1996, Pages 4291-4292

  Shigetomi, Sh ^a   Ikari, T ^a   Nakashima, H ^a  

^a KURUME UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT; IMPURITIES; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS;

IMPURITY LEVEL; LAYERED SEMICONDUCTOR;

SEMICONDUCTOR MATERIALS;

EID: 0030206087     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4291     Document Type: Article

References (10)