Impurity levels in Sn-doped GaSe semiconductor

Physica Status Solidi (A) Applied Research

Volumn 162, Issue 2, 1997, Pages 649-659

  Micocci, G ^a   Serra, A ^a   Tepora, A ^a  

^a UNIVERSITY OF SALENTO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL IMPURITIES; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ELECTRIC SPACE CHARGE; ELECTRONS; HALL EFFECT; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THERMAL EFFECTS;

DEEP ELECTRON TRAPPING CENTERS; GALLIUM SELENIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031208755     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199708)162:2<649::AID-PSSA649>3.0.CO;2-Z     Document Type: Article

References (28)

1. A. G. KYAZYM-ZADE, R. K. MEKHTIEVK and A. A. AKHMEDOV, Soviet Phys. - Semicond 25, 840 (1992).
2. M. SPKINGFORD, Proc. Phys. Soc. (London) 82, 1020 (1963).
3. A. ClNGOLANI, A. MINAFRA, P. TANTALO, and C. PAORICI, phys. Stat. sol. (a) 4, K83 (1971).
4. A. CINGOLANI, C. MANFREDOTTI, A. MINAFRA, and A. RIZZO, phys. stat. sol. (a) 6, 63 (1971).
5. V. CAPOZZI and A. MINAFRA, J. Phys. C 14, 4335 (1981).
6. PH. SCHMlD, J. P. VOITCHOVSKY, and A. MERCIER, phys. stat. sol, (a) 21, 443 (1974).
7. S. SHIGETOMI, T. IKARI, and H. NISHIMURE, J. Appl. Phys. 69, 7936 (1991).
8. S. SHIGETOMI, T. IKARI, and H. NAKASHIMA, J. Appl. Phys. 73, 4686 (1993).
9. G. MICOCCI, A. RIZZO, and A. TEPORE, J. Appl. Phys. 58, 1274 (1985).
10. C. DE BLASI, C. MICOCCI, S. MONGELLI, and A. TEPORE, J. Cryst. Growth 57, 482 (1982).
11. C. DE BLASI, S. GALASSINI, C. MANFREDOTTI, G. MICOCCI, A. TEPORE, and A. RIZZO, Mater. Chem. 4, 437 (1979).
12. L. J. VAN DER PAUW, Philips Res. Rep. 13, 1 (1958).
13. J. R., CHWANG, B. J. SMITH, and C. R. CROWELL, Solid State Electronics 17, 1217 (1974).
14. V. L. CARDETTA, A. M. MANCINI C. MANFREDOTTI, and A. RIZZO, J. Cryst. Growth 17, 155 (1972)
15. V. L. CARDETTA, A. M. MANCINI, and A. RIZZO, J. Cryst. Growth 16, 183 (1972).
16. J. S. BLAKEMORE, Semiconductor Statistics, Pergamon Press, New York 1962.
17. R. LETOULLEC, N. PICCIOLI, and J. C. CHEVIN, Phys. Rev. B 22, 6162 (1980).
18. A. RIZZO, G. MICOCCI, and A. TEPORE, J. Appl. Phys. 48, 3115 (1977).
19. V. K. MATHUR and R. P. DAHIYA. Solid Solid Electronics 17, 61 (1974).
20. C. MANFREDOTTI, C. DE BLASI, S. GALASSINI, G. MICOCCI, L. RUGGIERO, and A. TEPORE, phys. stat. sol. (a) 36, 509 (1976).
21. K. H. NICHOLAS and J. WOODS, Brit. J. Appl. Phys. 15, 783 (1964).
22. G. F. J. GARLICK and A. F. GIBSON, Proc. Phys. Soc. 60, 574 (1948).
23. C. H. HAAKE, J. Opt. Soc. Amer. 47, 649 (1957).
24. R. H. BUBE, Photoconductivity of solids, Wiley, New York 1960 (p. 262).
25. W. HOOGENSTRATEN, Philips Res. Rep. 13, 515 (1958).
26. R. CHEN, J. Electrochem. Soc. 116, 1254 (1969).
27. R. CHEN, J. Appl. Phys, 40, 570 (1969).
28. E. AULICH, J. L. BREBNER, and E. MOOSER, phys. stat. sol. 31, 129 (1969).