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physica status solidi (a)

Volumn 29, Issue 2, 1975, Pages 475-480

Electrical properties of GaTe grown by various methods

(5) Manfredotti, C a Murri, R a Rizzo, A a Vasanelli, L a Micocci, G b

a Nucleare Sezione (Italy)

b Dipartimento di Fisica (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - GROWING;

GALLIUM TELLURIDES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0016514036 PISSN: 00318965 EISSN: 1521396X Source Type: Journal
DOI: 10.1002/pssa.2210290216 Document Type: Article

Times cited : (36)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.