Wet chemical digital etching of GaAs at room temperature

Journal of the Electrochemical Society

Volumn 143, Issue 11, 1996, Pages 3652-3656

  DeSalvo, Gregory C ^a,b   Bozada, Christopher A ^a   Ebel, John L ^a   Look, David C ^a,b   Barrette, John P ^a   Cerny, Charles L A ^a   Dettmer, Ross W ^a,b   Gillespie, James K ^a   Havasy, Charles K ^a   Jenkins, Thomas J ^a,b   Nakano, Kenichi ^a   Pettiford, Carl I ^a   Quach, Tony K ^a   Sewell, James S ^a   Via, G David ^a,b  

^a WRIGHT PATTERSON AIR FORCE BASE   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACIDS; COMPOSITION EFFECTS; DIFFUSION IN SOLIDS; HYDROGEN PEROXIDE; OXIDATION; SEMICONDUCTING GALLIUM ARSENIDE;

WET CHEMICAL DIGITAL ETCHING;

ETCHING;

EID: 0030290762     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837266     Document Type: Article

References (26)

1. K. B. Chough, T. Y. Chang, M. D. Feuer, N. J. Sauer, and B. Lalevic, IEEE Electron Device Lett., EDL-13, 451 (1992).
2. F. Hirler, R. Küchler, R. Strenz, G. Abstreiter, G. Böhm, J. Smoliner, G. Tränkle, and G. Weimann, Surf. Sci., 263, 536 (1992).
3. G. C. DeSalvo, J. L. Ebel, C. A. Bozada, J. P. Barrette, C. L. Cerny, R. W. Dettmer, J. K. Gillespie, C. K. Havasy, T. J. Jenkins, K. Nakano, C. I. Pettiford, T. K. Quach, J. S. Sewell, and D. G. Via, in Proceedings of the 1996 International Conference on GaAs Manufacturing Technology, p. 29 (1996).
4. T. Meguro, M. Hamagaki, S. Modaressi, T. Hara, Y. Aoyagi, M. Ishii, and Y. Yamamoto, Appl. Phys. Lett., 56, 1552 (1990).
5. T. Meguro, M. Ishii, H. Kodama, M. Hamagaki, T. Hara, Y. Yamamoto, and Y. Aoyagi, Jpn. J. Appl. Phys., 29, 2216 (1990).
6. Y. Aoyagi, K. Shinmura, K. Kawasaki, T. Tomoko, K. Gamo, S. Namba, and I. Nakamoto, Appl. Phys. Lett., 60, 968 (1992).
7. M. Ishii, T. Meguro, H. Kodama, Y. Yamamoto, Y. Aoyagi, Jpn. J. Appl. Phys., 31, 2212 (1992).
8. T. Matsuura, J. Murota, and Y. Sawada, Appl. Phys. Lett., 63, 2803 (1993).
9. T. Meguro, M. Ishii, H. Kodama, Y. Yamamoto, K. Gamo, and Y. Aoyagi, Thin Solid Films, 225, 136 (1993).
10. P. A. Maki and D. J. Ehrlich, Appl Phys. Lett., 55, 91 (1989).
11. M. Ishii, T. Meguro, K. Gamo, T. Sugano, and Y. Aoyagi, Jpn. J. Appl. Phys., 32, 6178 (1993).
12. S. Takatani and T. Kikawa, Appl. Phys. Lett., 65, 2585 (1994).
13. F. Djamdji and R. Blunt, Mater. Sci. Engr., B20, 77 (1993).
14. Gallium Arsenide Materials, Devices, and Circuits, M. J. Howes and D. V. Morgan, Editors, p. 123-132, John Wiley & Sons, Inc., New York (1985).
15. B. Schwartz, CRC Critical Reviews in Solid State Sciences, 609 (1975).
16. S. S. Cohen, Thin Solid Films, 104, 361 (1983).
17. B. Schwartz, This Journal, 118, 657 (1971).
18. F. Lukes, Surf. Sci., 30, 91 (1972).
19. B. J. Sealy and P. L. F Hemment, Thin Solid Films, 22, S39 (1974).
20. G. Lucovsky, J. Vac. Sci. Technol., 19, 456 (1981).
21. W. Kern, RCA Rev., 39, 278 (1978).
22. D. W. Shaw, This Journal, 128, 874 (1981).
23. R. E. Williams, Gallium Arsenide Processing Techniques, pp. 93-122, Artech House, Dedham, MA, (1984).
24. G. C. DeSalvo, D. C. Look, C. A. Bozada, and J. L. Ebel, J. Appl. Phys., To be published, Jan. 1997.
25. D. J. Stirland and B. W. Straghan, Thin Solid Films, 31, 139 (1976).
26. S. Adachi and K. Oe, This Journal, 130, 2427 (1983).