I-V characteristics of metal-oxide-ZnSe nanowire structure

Journal of Physical Chemistry C

Volumn 112, Issue 47, 2008, Pages 18644-18650

  Zhou, S X ^a,c   Wang, Y G ^a,b   Han, W ^c   Wang, N ^d  

^a HUNAN UNIVERSITY   (China)

^b INSTITUTE OF PHYSICS   (China)

^c CENTRAL IRON AND STEEL RESEARCH INSTITUTE   (China)

^d HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ADMINISTRATIVE DATA PROCESSING; ELECTRIC CONDUCTIVITY; ELECTRODES; ELECTROLYSIS; ELECTRONS; IN SITU PROCESSING; METAL INSULATOR BOUNDARIES; METALS; MIS DEVICES; NANOWIRES; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR MATERIALS; SWITCHING CIRCUITS; THRESHOLD VOLTAGE; ZINC ALLOYS;

AL ELECTRODES; BANDGAP; CONTACT BARRIERS; ELECTRON TRANSPORTS; ENERGY LEVELS; IN SITU TRANSMISSION ELECTRON MICROSCOPIES; METAL ELECTRODES; MIS STRUCTURES; NONLINEAR FEATURES; OXIDE LAYERS; REVERSE BIASES; SCHOTTKY CONTACTS; SEMI-CONDUCTORS; SEMICONDUCTOR NANOWIRES; V CURVES; ZNSE NANOWIRES;

ALUMINUM;

EID: 57549090590     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp8068046     Document Type: Article

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