Nanoring magnetic tunnel junction and its application in magnetic random access memory demo devices with spin-polarized current switching (invited)

Journal of Applied Physics

Volumn 103, Issue 7, 2008, Pages

  Han, X F ^a   Wen, Z C ^a   Wei, H X ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC MATERIALS; MAGNETIC FIELDS; MAGNETIZATION; RANDOM ACCESS STORAGE; SWITCHING;

ANTIPARALLEL ONION STATES; CIRCULAR MAGNETIC FIELDS;

TUNNEL JUNCTIONS;

EID: 42149182424     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2839774     Document Type: Article

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