Atomic structure and electronic properties of HCl-isopropanol treated and vacuum annealed GaAs(100) surface

Applied Surface Science

Volumn 142, Issue 1, 1999, Pages 75-80

  Tereshchenko, O E ^a   Chikichev, S I ^a   Terekhov, A S ^a  

^a NOVOSIBIRSK STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ALCOHOLS; ANNEALING; CARBON; CHARGE TRANSFER; ELECTRONIC PROPERTIES; ELECTRONS; FERMI LEVEL; HYDROCARBONS; MOLECULAR STRUCTURE; NITROGEN; SURFACES; VACUUM;

ATOMIC STRUCTURE; ELECTRON AFFINITY; RESIDUAL CARBON CONTAMINATION; SURFACE RECONSTRUCTIONS; VACUUM ANNEALING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032675535     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00634-5     Document Type: Article

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