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Volumn 69, Issue 8, 2004, Pages 813081-813084

Surface states at the GaAs(001)2X4 surface

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE;

EID: 1842532034     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (20)

References (33)
  • 2
    • 84910585323 scopus 로고
    • D. E. Aspnes, J. Vac. Sci. Technol. B 3, 1138 (1985); 3, 1498 (1985).
    • (1985) J. Vac. Sci. Technol. B , vol.3 , pp. 1498
  • 4
    • 0010626170 scopus 로고
    • V. L. Berkovits, I. V. Makarenko, T. A. Minashvili, and V. I. Safarov, Fiz. Tekh. Poluprovodn. 20, 1037 (1986) [Sov. Phys. Semicond. 20, 654 (1986)].
    • (1986) Sov. Phys. Semicond. , vol.20 , pp. 654
  • 25
    • 0042946676 scopus 로고
    • M. Arens, M. Kuball, N. Esser, W. Richter, M. Cardona, and B. O. Fimland, Phys. Rev. B 51, 10923 (1995); N. Esser, P. V. Santos, M. Kuball, M. Cardona, M. Arens, D. Pahlke, W. Richter, F. Stietz, J. A. Schaefer, and B. O. Fimland, J. Vac. Sci. Technol. B 13, 1666 (1995).
    • (1995) Phys. Rev. B , vol.51 , pp. 10923
    • Arens, M.1    Kuball, M.2    Esser, N.3    Richter, W.4    Cardona, M.5    Fimland, B.O.6
  • 30
    • 33646635815 scopus 로고    scopus 로고
    • note
    • 0′ transition energies to shift by +0.3 and +0.1 eV, respectively, for a ten-layer slab). We note, however, that for the GaAs(001)-β2(2X4) surface, the inclusion of quasiparticle corrections results in only minor modifications to the overall lineshape (Ref. 9).
  • 31
    • 33646637989 scopus 로고    scopus 로고
    • note
    • -1.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.