Surface and bulk origin of the optical anisotropy of As-rich GaAs(001) and Ga1−xInxAs(001)

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 24, 2003, Pages

  Paget, D ^a   Hogan, C ^b   Berkovits, V L ^c   Tereshchenko, O E ^d  

^a LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

^c IOFFE INSTITUTE   (Russian Federation)

^d NOVOSIBIRSK STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM; INDIUM;

ANISOTROPY; ARTICLE; CALCULATION; CHEMICAL BINDING; CHEMICAL COMPOSITION; CONCENTRATION (PARAMETERS); ENERGY; MOLECULAR INTERACTION;

EID: 0043166290     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.245313     Document Type: Article

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