Fluxless bonding of silicon to Ag-Copper using In-Ag with two UBM designs

IEEE Transactions on Components and Packaging Technologies

Volumn 31, Issue 4, 2008, Pages 776-781

  Kim, Jong S ^a   Wang, Pin J ^a   Lee, Chin C ^a  

^a University of California at Irvine   (United States)

Author keywords

Ag; AgIn intermetallic compound (IMC); Cu substrate; Fluxless bonding; In; InNi IMC; Laminating; Soldering

Indexed keywords

BRAZING; CHEMICAL OXYGEN DEMAND; COPPER; ELECTROCHEMISTRY; INDIUM; INTERMETALLICS; LAMINATING; OXIDATION; OXYGEN; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INTERMETALLICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOLDERING; SOLDERING ALLOYS; SUBSTRATES; THERMAL EXPANSION; THERMAL SPRAYING; WELDING;

AG; AGIN INTERMETALLIC COMPOUND (IMC); CU SUBSTRATE; FLUXLESS BONDING; IN; INNI IMC;

SILVER;

EID: 57349156967     PISSN: 15213331     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAPT.2008.2001842     Document Type: Article

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