Fluxless bonding of silicon to copper with high-temperature Ag-Sn joint made at low temperature

Proceedings - Electronic Components and Technology Conference

Volumn 2006, Issue , 2006, Pages 1706-1711

  Kim, Jong S ^a   Yokozuka, Takehide ^a,b   Lee, Chin C ^a  

^a University of California at Irvine   (United States)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FLUXLESS BONDING; STRESS BUFFERS; UNDER BUMP METALLIZATION (UBM); VACUUM ENVIRONMENT;

ANNEALING; BONDING; COPPER; ELECTROPLATING; HIGH TEMPERATURE EFFECTS; MICROPROCESSOR CHIPS; MULTILAYERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INTERMETALLICS; SOLDERED JOINTS; THICK FILMS;

SILICON;

EID: 33845592787     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2006.1645888     Document Type: Conference Paper

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