Physical understanding of the reliability improvement of dual high-k CMOSFETs with the fifth element incorporation into HfSiON gate dielectrics

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 66-67

  Sato, M ^a,c   Umezawa, N ^b   Mise, N ^a   Kamiyama, S ^a   Kadoshima, M ^a   Morooka, T ^a   Adachi, T ^b   Chikyow, ^b   Yamabe, K ^c   Shiraishi, K ^c   Miyazaki, S ^d   Uedono, A ^c   Yamada, K ^e   Aoyama, T ^a   Eimori, T ^a   Nara, Y ^a   Ohji, Y ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d HIROSHIMA UNIVERSITY   (Japan)

^e WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CLARIFICATION; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; TECHNOLOGY;

HFSION GATE DIELECTRICS; RELIABILITY IMPROVEMENT; VLSI TECHNOLOGIES;

GATE DIELECTRICS;

EID: 51949099185     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588566     Document Type: Conference Paper

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