Epitaxial cubic HfN diffusion barriers deposited on Si (001) by using a TiN buffer layer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 1871-1874

  Araujo, Roy A ^a   Zhang, Xinghang ^a   Wang, Haiyan ^a  

^a Texas AandM University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CU DIFFUSIONS; CUBIC HFN; DIFFUSION BARRIER PROPERTIES; DIFFUSION DEPTHS; ELECTRICAL RESISTIVITIES; HIGH RESOLUTIONS; IN VACUUMS; MICROSTRUCTURAL CHARACTERIZATIONS; PULSED LASERS; ROOM TEMPERATURES; SI(001); SI(001) SUBSTRATE; TIN BUFFER LAYERS; X-RAY DIFFRACTIONS;

BUFFER LAYERS; COPPER; DIFFUSION; ELECTRIC RESISTANCE; EPITAXIAL FILMS; FILM GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; OPTICAL WAVEGUIDES; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; SODIUM CHLORIDE; THICK FILMS; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

DIFFUSION BARRIERS;

EID: 57249108250     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3002391     Document Type: Article

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