Anneal behavior of reactively sputtered HfN films

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1730-1733

  Lannon Jr , J ^a   Pace, C ^a   Goodwin, S ^a   Solomon, S ^b   Bryant, P ^c  

^a MCNC   (United States)

^b Acumen Consulting   (United States)

^c Santa Barbara Infrared Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYER; ELECTRICAL RESISTIVITY; METAL NITRIDE FILMS; THERMAL ANNEALING;

ANNEALING; DEPOSITION; DIFFUSION; HAFNIUM COMPOUNDS; HIGH TEMPERATURE EFFECTS; NITRIDES; OPTIMIZATION; PHYSICAL PROPERTIES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON COMPOUNDS; SPUTTERING; STABILITY; THERMODYNAMIC PROPERTIES;

THIN FILMS;

EID: 4444341336     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1705642     Document Type: Conference Paper

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