Barrier capability of Hf-N films with various nitrogen concentrations against copper diffusion in Cu/Hf-N/n+-p junction diodes

Journal of the Electrochemical Society

Volumn 152, Issue 2, 2005, Pages

  Ou, Keng Liang ^a   Chiou, Shi Yung ^b   Lin, Ming Hongn ^b   Hsu, Ray Quan ^c  

^a TAIPEI MEDICAL UNIVERSITY   (Taiwan)

^b NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; DIFFRACTOMETERS; DIFFUSION; DIODES; MAGNETRON SPUTTERING; MORPHOLOGY; NITROGEN; OXIDATION; PHASE TRANSITIONS; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; THERMODYNAMIC STABILITY; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

BARRIER CAPABILITY; DIFFUSION BARRIERS; GRAZING INCIDENCE X-RAY DIFFRACTOMETRY (GIXRD); JUNCTION DIODES; RADIO FREQUENCY (RF) MAGNETRON SPUTTERING;

HAFNIUM COMPOUNDS;

EID: 14744275068     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1850367     Document Type: Article

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