Bias-induced doping engineering with ionic adsorbates on single-walled carbon nanotube thin film transistors

New Journal of Physics

Volumn 10, Issue , 2008, Pages

  Yu, Woo Jong ^a   Jeong, Seung Yol ^a   Kim, Ki Kang ^a   Kang, Bo Ram ^a   Bae, Dong Jae ^a   Lee, Minbaek ^b   Hong, Seunghun ^b   Gaunkar, Sunanda Prabhu ^c   Pribat, Didier ^c   Perello, David ^d   Yun, Minhee ^d   Choi, Jae Young ^e   Lee, Young Hee ^e  

^a Sungkyunkwan University   (South Korea)

^b Seoul National University   (South Korea)

^c LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^d University of Pittsburgh   (United States)

^e Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORBATES; DOPING (ADDITIVES); NANOCOMPOSITES; NANOTUBES; SCHOTTKY BARRIER DIODES; SINGLE-WALLED CARBON NANOTUBES (SWCN); THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

AMBIENT CONDITIONS; AND GATES; BIASING METHODS; CHEMICAL DOPING; DOPANT TYPES; DOPING CONTROLS; DOPING STRATEGIES; DRAIN BIASES; FUNCTIONALIZATION; GATE BIASES; HIGH STABILITIES; METALLIC CHANNELS; NANO DEVICES; P-TYPE DOPING; RANDOM NETWORKS; SCHOTTKY DIODES;

CARBON NANOTUBES;

EID: 57249084015     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/10/11/113013     Document Type: Article

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