Control of carrier density by a solution method in carbon-nanotube devices

Advanced Materials

Volumn 17, Issue 20, 2005, Pages 2430-2434

  Takenobu, Taishi ^a,b   Kanbara, Takayoshi ^a,c   Akima, Nima ^a   Takahashi, Tetsuo ^a   Shiraishi, Masashi ^d   Tsukagoshi, Kazuhito ^b,c   Kataura, Hiromichi ^e   Aoyagi, Yoshinobu ^c,f   Iwasa, Yoshihiro ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c RIKEN   (Japan)

^d OSAKA UNIVERSITY   (Japan)

^e NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^f TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRIC POWER DISTRIBUTION; FIELD EFFECT TRANSISTORS; LIGHT ABSORPTION; SWITCHING;

DEVICE PERFORMANCE; SOLUTION PROCESS; SWCNT DEVICES; SWITCHING VOLTAGES;

CARBON NANOTUBES;

EID: 27144527542     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200500759     Document Type: Article

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