Stability of N-channel polysilicon thin-film transistors with ECR plasma thermal gate oxide

IEEE Electron Device Letters

Volumn 17, Issue 4, 1996, Pages 169-171

  Lee, Jung Yeal ^a,b   Han, Chul Hi ^a,c   Kim, Chooog Ki ^a,c  

^a IEEE

^b Hynix Semiconductor Inc   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEGRADATION; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRON CYCLOTRON RESONANCE; GATES (TRANSISTOR); HOT CARRIERS; OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR PLASMAS; STABILITY; TRANSCONDUCTANCE;

PLASMA THERMAL GATE OXIDE; POLYSILICON THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 0030126862     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.485163     Document Type: Article

References (15)

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