Hopping conduction and low-frequency dielectric relaxation in 5 mol % Mn doped (Pb,Sr) TiO3 films

Journal of Applied Physics

Volumn 104, Issue 10, 2008, Pages

  Yang, J ^a   Meng, X J ^a   Shen, M R ^b   Fang, L ^b   Wang, J L ^a   Lin, T ^a   Sun, J L ^a   Chu, J H ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b SOOCHOW UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHARGE CARRIERS; CHEMICAL PROPERTIES; DIELECTRIC RELAXATION; HEAT CONDUCTION; LEAD; MANGANESE; MANGANESE COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; TITANIUM OXIDES;

(PB ,SR)TIO3; AC CONDUCTIVITIES; CHEMICAL SOLUTION DEPOSITIONS; CORRELATED BARRIER HOPPING MODELS; DIELECTRIC RESPONSES; DIFFERENT HEIGHTS; FERROELECTRIC PROPERTIES; HOPPING CONDUCTIONS; HOPPING PROCESSES; LOCALIZED CHARGES; LOCALIZED ELECTRONS; LOW FREQUENCIES; POTENTIAL BARRIERS; RANGE HOPPING; SILICON SUBSTRATES; TRAP SITES;

FERROELECTRIC FILMS;

EID: 57049174499     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3021447     Document Type: Article

References (32)

1. M. Dawber, K. M. Rabe, and J. F. Scott, Rev. Mod. Phys. 0034-6861 10.1103/RevModPhys.77.1083 77, 1083 (2005).
2. S. Subrahmanyam and E. Goo, Acta Mater. 1359-6454 10.1016/S1359-6454(97) 00313-3 46, 817 (1998).
3. J. L. Wang, Y. S. Lai, B. S. Chiou, H. Y. Tseng, C. C. Tsai H. C. Cheng, C. P. Juan, and C. K. Jan, J. Phys.: Condens. Matter 0953-8984 10.1088/0953-8984/18/46/013 18, 10457 (2006).
4. S. W. Liu, Y. Lin, J. Weaver, W. Donner, X. Chen, C. L. Chen, J. C. Jiang, E. I. Meleties, and A. Bhalla, Appl. Phys. Lett. 0003-6951 10.1063/1.1801176 85, 3202 (2004).
5. F. M. Pontes, S. H. Leal, E. R. Leite, E. Longo, P. S. Pizani, A. J. Chiquito, M. A. C. Machado, and J. A. Varela, J. Appl. Phys. 0021-8979 10.1063/1.1758314 96, 1192 (2004).
6. V. M. Naik, D. Haddad, R. Naik, J. Mantese, N. W. Schubring, A. L. Micheli, and G. W. Augner, J. Appl. Phys. 0021-8979 10.1063/1.1534626 93, 1731 (2003).
7. J. Yang, J. H. Chu, and M. R. Shen, Appl. Phys. Lett. 0003-6951 10.1063/1.2748080 90, 242908 (2007).
8. H. Xu, M. R. Shen, L. Fang, D. L. Yao, and Z. Q. Gan, Thin Solid Films 0040-6090 10.1016/j.tsf.2005.08.001 493, 197 (2005).
9. S. W. Liu, J. Chakhalian, M. Xiao, and C. L. Chen, Appl. Phys. Lett. 0003-6951 10.1063/1.2433023 90, 042901 (2007).
10. M. Jain, N. K. Karan, J. Yoon, H. Wang, I. Usov, R. S. Katiyar, A. S. Bhalla, and Q. X. Jia, Appl. Phys. Lett. 0003-6951 10.1063/1.2770962 91, 072908 (2007).
11. L. L. Chen, M. R. Shen, L. Fang, and Y. Xu, J. Sol-Gel Sci. Technol. 0928-0707 10.1007/s10971-006-0649-9 42, 299 (2007).
12. H. Y. Chen, J. M. Wu, H. E. Huang, and H. Y. Bor, Appl. Phys. Lett. 0003-6951 10.1063/1.2712807 90, 112907 (2007).
13. Q. Zhang and R. W. Whatmore, J. Appl. Phys. 0021-8979 10.1063/1.1613370 94, 5228 (2003).
14. G. R. Li, L. Y. Zheng, Q. R. Yin, B. Jiang, and W. W. Cao, J. Appl. Phys. 0021-8979 10.1063/1.2058174 98, 064108 (2005); Y. Y. Yao, C. H. Song, P. Bao, D. Su, X. M. Lu, J. S. Zhu, and Y. N. Wang, J. Appl. Phys. 0021-8979 10.1063/1.1649456 95, 3126 (2004).
15. M. Kumar and K. L. Yadav, J. Phys.: Condens. Matter 0953-8984 10.1088/0953-8984/19/24/242202 19, 242202 (2007).
16. R. Maier, J. L. Cohn, J. J. Neumeier, and L. A. Bendersky, Appl. Phys. Lett. 0003-6951 10.1063/1.1367311 78, 2536 (2001).
17. X. D. Zhang, X. J. Meng, J. L. Sun, G. S. Wang, T. Lin, and J. H. Chu, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.2198867 24, 914 (2006).
18. X. Wang and H. Ishiwara, Appl. Phys. Lett. 0003-6951 10.1063/1.1566087 82, 2479 (2003).
19. W. J. Jie, J. Zhu, W. F. Qin, X. H. Wei, J. Xiong, Y. Zhang, A. Bhalla, and Y. R. Li, J. Phys. D 0022-3727 10.1088/0022-3727/40/9/028 40, 2854 (2007).
20. X. J. Meng, J. H. Ma, J. L. Sun, T. Lin, J. Yu, G. S. Wang, and J. H. Chu, Appl. Phys. A: Mater. Sci. Process. 0947-8396 10.1007/s00339-003-2172-y 78, 1089 (2004).
21. A. K. Jonscher Dielectric Relaxation in Solids (Chelsea Dielectrics, London, 1983); C. Ang and Z. Yu, Appl. Phys. Lett. 0003-6951 10.1063/1.2193655 88, 162902 (2006).
22. A. K. Jonscher, Nature (London) 0028-0836 10.1038/267673a0 267, 673 (1977).
23. N. S. Almodovar, J. Portelles, O. Raymond, J. Heiras, and J. M. Siqueirosa, J. Appl. Phys. 0021-8979 10.1063/1.2824898 102, 124105 (2007); D. P. Almond and A. R. West, Solid State Ion. 9-10, 277 (1983). 0167-2738
24. P. Lunkenheimer and A. Loidl, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.91.207601 91, 207601 (2003); R. Thomas, V. K. Varadan, S. Komarneni, and D. C. Dube, J. Appl. Phys. 0021-8979 10.1063/1.1367318 90, 1480 (2001).
25. S. R. Elliott, Adv. Phys. 0001-8732 10.1080/00018738700101971 36, 135 (1987); G. E. Pike, Phys. Rev. B 0556-2805 10.1103/PhysRevB.6.1572 6, 1572 (1972).
26. V. Gupta and A. Mansingh, Phys. Rev. B 0163-1829 10.1103/PhysRevB.49.1989 49, 1989 (1994); C. T. Moynihan, L. P. Boesch, and N. L. Laberage, Phys. Chem. Glasses 14, 122 (1973). 0031-9090
27. A. K. Jonscher, J. Phys. D 0022-3727 10.1088/0022-3727/32/14/201 32, R57 (1999); O. Bidault, M. Maglione, M. Actis, M. Kchikech, and B. Salce, Phys. Rev. B 0163-1829 10.1103/PhysRevB.52.4191 52, 4191 (1995).
28. Z. H. Zhou, J. M. Xue, W. Z. Li, J. Wang, H. Zhu, and J. M. Miao, J. Phys. D 0022-3727 10.1088/0022-3727/38/4/019 38, 642 (2005); A. E. Paladino, J. Am. Ceram. Soc. 0002-7820 10.1111/j.1151-2916.1965.tb14803.x 48, 476 (1965).
29. N. Noginova, G. B. Loutts, E. S. Gillman, V. A. Atsarkin, and A. A. Verevkin, Phys. Rev. B 0163-1829 10.1103/PhysRevB.63.174414 63, 174414 (2001); S. Bhattacharya, D. K. Modaka, P. K. Pal, and B. K. Chaudhuri, Mater. Chem. Phys. 0254-0584 10.1016/S0254-0584(00)00368-0 68, 239 (2001).
30. X. Wang, M. Gu, B. Yang, S. N. Zhu, and W. W. Cao, Microelectron. Eng. 0167-9317 10.1016/S0167-9317(02)01011-0 66, 855 (2003); S. B. Desu and E. C. Subbarao, Ferroelectrics 37, 665 (1981). 0015-0193
31. M. Backhaus-Ricoult, Solid State Ion. 177, 2195 (2006). 0167-2738
32. F. W. Poulsen, Solid State Ion. 129, 145 (2000). 0167-2738