Effect of substitution of vanadium on the structure and electrical properties of Bi3.25La0.75Ti3O12 thin films

Applied Physics A: Materials Science and Processing

Volumn 78, Issue 7, 2004, Pages 1089-1091

  Meng, X J ^a   Ma, J H ^a   Sun, J L ^a   Lin, T ^a   Yu, J ^a   Wang, G S ^a   Chu, J H ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; ELECTRIC FIELD EFFECTS; FERROELECTRIC THIN FILMS; LANTHANUM; MOLECULAR STRUCTURE; SOLUTIONS; SUBSTITUTION REACTIONS; SYNTHESIS (CHEMICAL); VANADIUM;

DEFECT CONCENTRATION; RAYLEIGH CONSTANT;

BISMUTH COMPOUNDS;

EID: 1842482277     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-003-2172-y     Document Type: Article

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