Hall effect and dielectric properties of Mn-doped barium titanate

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 855-859

  Wang, Xiang ^a   Gu, Min ^a   Yang, Bin ^a   Zhu, Shining ^a   Cao, Wenwu ^b  

^a NANJING UNIVERSITY   (China)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

BaTiO3; Charge carrier; Hall coefficient; Mn; Oxygen vacancy

Indexed keywords

CHARGE CARRIERS; DOPING (ADDITIVES); ELECTRONS; HALL EFFECT; PERMITTIVITY; SOL-GELS;

LEAKAGE CONDUCTANCE;

BARIUM TITANATE;

EID: 0037393536     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)01011-0     Document Type: Conference Paper

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