Investigation of room temperature electrical resistivities of LaNiO 3-δ thin films deposited by rf magnetron sputtering and high oxygen-pressure processing

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 4, 2006, Pages 914-918

  Zhang, X D ^a   Meng, X J ^a   Sun, J L ^a   Wang, G S ^a   Lin, T ^a   Chu, J H ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; LITHIUM NIOBATE; MAGNETRON SPUTTERING; OXYGEN; PARTIAL PRESSURE; PEROVSKITE; SPUTTER DEPOSITION;

OXYGEN PARTIAL PRESSURE; PRESSURE PROCESSING; ROOM TEMPERATURE; SUBSTRATE TEMPERATURES;

THIN FILMS;

EID: 33745490080     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2198867     Document Type: Article

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